Publications by Thomas Sand Jespersen
- 2019
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Coupling of shells in a carbon nanotube quantum dot -
Abstract
- We systematically study the coupling of longitudinal modes (shells) in a carbon nanotube quantum dot. Inelastic cotunneling spectroscopy is used to probe the excitation spectrum in parallel, perpendicular and rotating magnetic fields. The data is compared to a theoretical model including coupling between shells, induced by atomically sharp disorder in the nanotube. The calculated excitation spectra show good correspondence with experimental data.
M. C. Hels, T. S. Jespersen, J. Nygård, K. Grove-Rasmussen Journal reference: Phys. Rev. B 99, 035422 (2019) [pdf] DOI: 10.1103/PhysRevB.99.035422
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Coupling of shells in a carbon nanotube quantum dot -
Abstract
- 2017
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Transport Signatures of Quasiparticle Poisoning in a Majorana Island -
Abstract
- We investigate effects of quasiparticle poisoning in a Majorana island with strong tunnel coupling to normal-metal leads. In addition to the main Coulomb blockade diamonds, "shadow" diamonds appear, shifted by 1e in gate voltage, consistent with transport through an excited (poisoned) state of the island. Comparison to a simple model yields an estimate of parity lifetime for the strongly coupled island (~ 1 μs) and sets a bound for a weakly coupled island (> 10 μs). Fluctuations in the gate-voltage spacing of Coulomb peaks at high field, reflecting Majorana hybridization, are enhanced by the reduced lever arm at strong coupling. In energy units, fluctuations are consistent with previous measurements.
S. M. Albrecht, E. B. Hansen, A. P. Higginbotham, F. Kuemmeth, T. S. Jespersen, J. Nygård, P. Krogstrup, J. Danon, K. Flensberg, C. M. Marcus Journal reference: Phys. Rev. Lett. 118, 137701 (2017) [pdf] DOI: 10.1103/PhysRevLett.118.137701
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Transport Signatures of Quasiparticle Poisoning in a Majorana Island -
Abstract
- 2016
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Exponential protection of zero modes in Majorana islands -
Abstract
- Majorana zero modes are quasiparticle excitations in condensed matter systems that have been proposed as building blocks of fault-tolerant quantum computers [1]. They are expected to exhibit non-Abelian particle statistics, in contrast to the usual statistics of fermions and bosons, enabling quantum operations to be performed by braiding isolated modes around one another. Quantum braiding operations are topologically protected insofar as these modes are pinned near zero energy, and the pinning is predicted to be exponential as the modes become spatially separated. Following theoretical proposals, several experiments have identified signatures of Majorana modes in proximitized nanowires and atomic chains, with small mode-splitting potentially explained by hybridization of Majoranas. Here, we use Coulomb-blockade spectroscopy in an InAs nanowire segment with epitaxial aluminum, which forms a proximity-induced superconducting Coulomb island (a Majorana island) that is isolated from normal-metal leads by tunnel barriers, to measure the splitting of near-zero-energy Majorana modes. We observe exponential suppression of energy splitting with increasing wire length. For short devices of a few hundred nanometers, sub-gap state energies oscillate as the magnetic field is varied, as is expected for hybridized Majorana modes. Splitting decreases by a factor of about ten for each half micrometer of increased wire length. For devices longer than about one micrometer, transport in strong magnetic fields occurs through a zero-energy state that is energetically isolated from a continuum, yielding uniformly spaced Coulomb-blockade conductance peaks, consistent with teleportation via Majorana modes. Our results help explain the trivial-to-topological transition in finite systems and to quantify the scaling of topological protection with end-mode separation.
S. M. Albrecht, A. P. Higginbotham, M. Madsen, F. Kuemmeth, T. S. Jespersen, J. Nygård, P. Krogstrup, C. M. Marcus Journal reference: Nature 531, 206 (2016) [pdf] DOI: 10.1038/nature17162
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Exponential protection of zero modes in Majorana islands -
Abstract
- 2015
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Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation -
Abstract
- The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.
R. Tanta, M. H. Madsen, Z. Liao, P. Krogstrup, T. Vosch, J. Nygard, T. S. Jespersen Journal reference: Appl. Phys. Lett. 107, 243101 (2015) [pdf] DOI: 10.1063/1.4937442
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Semiconductor-Nanowire-Based Superconducting Qubit -
Abstract
- We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (0.8 μs) and dephasing times (1 μs), exceeding gate operation times by two orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces crosstalk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.
T. W. Larsen, K. D. Petersson, F. Kuemmeth, T. S. Jespersen, P. Krogstrup, J. Nygard, C. M. Marcus Journal reference: Phys. Rev. Lett. 115, 127001 (2015) [pdf] DOI: 10.1103/PhysRevLett.115.127001
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Hard gap in epitaxial semiconductor–superconductor nanowires -
Abstract
- Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.
W. Chang, S. M. Albrecht, T. S. Jespersen, F. Kuemmeth, P. Krogstrup, J. Nygård, C. M. Marcus Journal reference: Nature Nanotechnology 10, 232 (2015) [pdf] DOI: 10.1038/nnano.2014.306
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Parity lifetime of bound states in a proximitized semiconductor nanowire -
Abstract
- Quasiparticle excitations can compromise the performance of superconducting devices, causing high frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics have been studied in detail in metallic superconductors but remain relatively unexplored in semiconductor-superconductor structures, which are now being intensely pursued in the context of topological superconductivity. To this end, we introduce a new physical system comprised of a gate-confined semiconductor nanowire with an epitaxially grown superconductor layer, yielding an isolated, proximitized nanowire segment. We identify Andreev-like bound states in the semiconductor via bias spectroscopy, determine the characteristic temperatures and magnetic fields for quasiparticle excitations, and extract a parity lifetime (poisoning time) of the bound state in the semiconductor exceeding 10 ms.
A. P. Higginbotham, S. M. Albrecht, G. Kirsanskas, W. Chang, F. Kuemmeth, P. Krogstrup, T. S. Jespersen, J. Nygard, K. Flensberg, C. M. Marcus Journal reference: Nature Physics 11, 1017 (2015) [pdf] DOI: 10.1038/nphys3461
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Epitaxy of semiconductor–superconductor nanowires -
Abstract
- Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and for designing devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al, are grown with epitaxially matched single plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and appears to solve the soft-gap problem in superconducting hybrid structures.
P. Krogstrup, N. L. B. Ziino, W. Chang, S. M. Albrecht, M. H. Madsen, E. Johnson, J. Nygård, C. M. Marcus, T. S. Jespersen Journal reference: Nature Materials 14, 400 (2015) [pdf] DOI: 10.1038/nmat4176
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Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation -
Abstract
- 2013
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Epitaxial aluminum contacts to InAs nanowires -
Abstract
- We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band gap layers in the interface region. These developments are relevant to hybrid superconductor-nanowire devices that support Majorana zero energy states.
N. L. B. Ziino, P. Krogstrup, M. H. Madsen, E. Johnson, J. B. Wagner, C. M. Marcus, J. Nygård, T. S. Jespersen 1309.4569v1 [pdf][pdf]
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Tunneling Spectroscopy of Quasiparticle Bound States in a Spinful Josephson Junction -
Abstract
- The spectrum of a segment of InAs nanowire, confined between two superconducting leads, was measured as function of gate voltage and superconducting phase difference using a third normal-metal tunnel probe. Sub-gap resonances for odd electron occupancy---interpreted as bound states involving a confined electron and a quasiparticle from the superconducting leads, reminiscent of Yu-Shiba-Rusinov states---evolve into Kondo-related resonances at higher magnetic fields. An additional zero bias peak of unknown origin is observed to coexist with the quasiparticle bound states.
W. Chang, V. E. Manucharyan, T. S. Jespersen, J. Nygard, C. M. Marcus Journal reference: Phys. Rev. Lett. 110, 217005 (2013) [pdf] DOI: 10.1103/PhysRevLett.110.217005
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Epitaxial aluminum contacts to InAs nanowires -
Abstract