Standard
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors. / Gluschke, J. G.; Seidl, J.; Burke, A. M.; Lyttleton, R. W.; Carrad, D. J.; Ullah, A. R.; Fahlvik, S.; Lehmann, S.; Linke, H.; Micolich, A. P.
In:
Nanotechnology, Vol. 30, No. 6, 064001, 08.02.2019.
Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Gluschke, JG, Seidl, J, Burke, AM, Lyttleton, RW
, Carrad, DJ, Ullah, AR, Fahlvik, S, Lehmann, S, Linke, H & Micolich, AP 2019, '
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors',
Nanotechnology, vol. 30, no. 6, 064001.
https://doi.org/10.1088/1361-6528/aaf1e5APA
Gluschke, J. G., Seidl, J., Burke, A. M., Lyttleton, R. W.
, Carrad, D. J., Ullah, A. R., Fahlvik, S., Lehmann, S., Linke, H., & Micolich, A. P. (2019).
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.
Nanotechnology,
30(6), [064001].
https://doi.org/10.1088/1361-6528/aaf1e5Vancouver
Gluschke JG, Seidl J, Burke AM, Lyttleton RW
, Carrad DJ, Ullah AR et al.
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.
Nanotechnology. 2019 Feb 8;30(6). 064001.
https://doi.org/10.1088/1361-6528/aaf1e5Author
Gluschke, J. G. ; Seidl, J. ; Burke, A. M. ; Lyttleton, R. W. ; Carrad, D. J. ; Ullah, A. R. ; Fahlvik, S. ; Lehmann, S. ; Linke, H. ; Micolich, A. P. / Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors. In: Nanotechnology. 2019 ; Vol. 30, No. 6.
Bibtex
@article{74747cd06e2d4851ba5bf6804a2f254a,
title = "Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors",
keywords = "nanowire, gate-all-around, GAA, field-effect transistor, nanowire alignment",
author = "Gluschke, {J. G.} and J. Seidl and Burke, {A. M.} and Lyttleton, {R. W.} and Carrad, {D. J.} and Ullah, {A. R.} and S. Fahlvik and S. Lehmann and H. Linke and Micolich, {A. P.}",
note = "[Qdev]",
year = "2019",
month = feb,
day = "8",
doi = "10.1088/1361-6528/aaf1e5",
language = "English",
volume = "30",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "Institute of Physics Publishing Ltd",
number = "6",
}
RIS
TY - JOUR
T1 - Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
AU - Gluschke, J. G.
AU - Seidl, J.
AU - Burke, A. M.
AU - Lyttleton, R. W.
AU - Carrad, D. J.
AU - Ullah, A. R.
AU - Fahlvik, S.
AU - Lehmann, S.
AU - Linke, H.
AU - Micolich, A. P.
N1 - [Qdev]
PY - 2019/2/8
Y1 - 2019/2/8
KW - nanowire
KW - gate-all-around
KW - GAA
KW - field-effect transistor
KW - nanowire alignment
U2 - 10.1088/1361-6528/aaf1e5
DO - 10.1088/1361-6528/aaf1e5
M3 - Journal article
C2 - 30523834
VL - 30
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 6
M1 - 064001
ER -
