A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3
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A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3. / Chen, Y.Z.; Bovet, Nicolas Emile; Trier, F.; Christensen, D.V.; Qu, F.M.; Andersen, N.H.; Kasama, Takeshi; Zhang, W.; Giraud, R.; Dufouleur, J.; Jespersen, Thomas Sand; Sun, J.R.; Smith, A.; Nygård, Jesper; Lu, L.; Büchner, B.; Shen, B.G.; Linderoth, Sidse Annett; Pryds, Nini.
In: Nature Communications, Vol. 4, 1371, 2013.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3
AU - Chen, Y.Z.
AU - Bovet, Nicolas Emile
AU - Trier, F.
AU - Christensen, D.V.
AU - Qu, F.M.
AU - Andersen, N.H.
AU - Kasama, Takeshi
AU - Zhang, W.
AU - Giraud, R.
AU - Dufouleur, J.
AU - Jespersen, Thomas Sand
AU - Sun, J.R.
AU - Smith, A.
AU - Nygård, Jesper
AU - Lu, L.
AU - Büchner, B.
AU - Shen, B.G.
AU - Linderoth, Sidse Annett
AU - Pryds, Nini
PY - 2013
Y1 - 2013
N2 - The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.
AB - The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.
U2 - 10.1038/ncomms2394
DO - 10.1038/ncomms2394
M3 - Journal article
C2 - 23340411
VL - 4
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
M1 - 1371
ER -
ID: 91137044