Bachelors Defense: Thue Christian Thann Nikolajsen og Tobias Særkjær

This thesis investigates misfit (edge) dislocations in buffered SAG InAs nanowires in an attempt to understand which strain energy thresholds there exists for creation. A theoretical description based on the melting approximation is outlined as a generalization of Hooke's Law in three dimensions, and a simulation is made for different geometries to assess strain energy densities for different lattice mismatches and several other parameters. Transmission Electron Microscope imagery is analyzed on relevant samples to assess characteristic distances between misfit dislocations for different geometries. We aim to fix a lower and upper bound for the formation energy of a misfit dislocation in InAs on GaAs.