Bachelor Thesis Defense: Marina Hesselberg
Title: Fabrication and Characterization of InSb Quantum Well Device in Perpendicular and Parallel Magnetic Fields
Abstract: This thesis is focused on fabrication and characterization of an InSb quantum well. A Hall Bar device is manufactured and a Hall effect measurement is carried out. Values such as the electron density and the mobility are then extracted. The weak antilocalization peak is observed and the usual fitting model is shown not to apply to the data obtained. A rough estimation of spin-oribt energy is made from direct readout of the peak. Finally, a magnetic field applied in the plane of the quantum well was shown to destroy the weak antilocalization effect.