Seminar with Professor Jonas Johansson

Associate Professor from Nano Lund

Title: Understanding the composition of epitaxially grown ternary III-V nanowires


Bandgap engineering is an important enabling technology for electronics and optoelectronics applications of III-V semiconductor nanowires. The most straightforward approach to bandgap engineering in nanowires is composition control in ternary nanowires. The aim of this presentation is to explain how the nanowire composition during particle seeded growth depends on the composition of the seed alloy particle. Following our previous discussion of the composition of ternary III-V nanowires in the nucleation limited regime [1], we have proposed a model for the kinetically limited composition of metal particle seeded ternary III-V nanowires [2]. The model is based on diffusion limited growth of supercritical nuclei within two-component nucleation theory. We derive the model for the general case and then we discuss it in terms of InGaAs nanowire growth. Applying the model to gold-seeded and self-seeded growth of InGaAs we are able to explain the experimentally obtained features related to nanowire compositions, including the attainability of compositions within the miscibility gap.

[1] J. Johansson, M. Ghasemi, Composition of Gold Alloy Seeded InGaAs Nanowires in the Nucleation Limited Regime, Cryst. Growth Des. 17 (2017) 1630-1635.

[2] J. Johansson, M. Ghasemi, Kinetically limited composition of ternary III-V nanowires, Phys. Rev. Mater. 1 (2017) 040401(R).